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*TO-220 *TO-218
*TO-218X
TO-252 D-Pak TO-263 D 2 Pak TO-251 V-Pak
MT2 MT1
G
(6 A to 40 A)
E4
General Description
Teccor offers bidirectional alternistors with current ratings from 6 A to 40 A and voltages from 200 V to 1000 V as part of Teccor's broad line of thyristors. Teccor's alternistor is specifically designed for applications that switch highly inductive loads. A special chip offers the same performance as two thyristors (SCRs) wired inverse parallel (back-to-back), providing better turn-off behavior than a standard triac. An alternistor may be triggered from a blocking to conduction state for either polarity of applied AC voltage with operating modes in Quadrants I, II, and III. This new chip construction provides two electrically separate SCR structures, providing enhanced dv/dt characteristics while retaining the advantages of a single-chip device. All alternistors have glass-passivated junctions to ensure longterm reliability and parameter stability. Teccor's glass-passivated junctions offer a reliable barrier against junction contamination. Teccor's TO-218X package is designed for heavy, steady powerhandling capability. It features large eyelet terminals for ease of soldering heavy gauge hook-up wire. All the isolated packages have a standard isolation voltage rating of 2500 V rms. Variations of devices covered in this data sheet are available for custom design applications. Consult the factory for further information.
Features
* * * * * High surge current capability Glass-passivated junctions 2500 V ac isolation for L, J, and K Packages High commutating dv/dt High static dv/dt
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Alternistor Triacs
Data Sheets
Part Number IT(RMS)
(4)(16)
MT2
Isolated
MT2
Non-isolated
VDRM
(1)
IGT
(3) (7) (15) (17)
IDRM
(1) (18)
MT2
G MT2
MT2
G MT2 MT1
MT1 MT2
G
MT1 G MT2
MT1
G MT2
MT1
mAmps TO-252 D-Pak Q2006DH3 Q4006DH3 Q6006DH3 Q8006DH3 QK006DH3 Q2006DH4 Q4006DH4 Q6006DH4 Q8006DH4 QK006DH4 Q2006NH4 Q4006NH4 Q6006NH4 Q8006NH4 QK006NH4 TO-263 D2Pak Volts MIN 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 Q2008NH4 Q4008NH4 Q6008NH4 Q8008NH4 QK008NH4 Q2010NH5 Q4010NH5 Q6010NH5 Q8010NH5 QK010NH5 Q2012NH5 Q4012NH5 Q6012NH5 Q8012NH5 QK012NH5 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 QI QII MAX 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 10 10 10 10 10 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 0.01 0.01 0.01 0.01 0.02 QIII TC = 25 C
mAmps TC = 100 C MAX 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 2 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 0.5 0.5 0.5 0.5 3 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 TC = 125 C
T0-220 MAX
TO-220
TO-251 V-Pak Q2006VH3 Q4006VH3 Q6006VH3 Q8006VH3 QK006VH3 Q2006VH4
See "Package Dimensions" section for variations. (11)
6A
Q4006VH4 Q6006VH4 Q8006VH4 QK006VH4 Q2006LH4 Q4006LH4 Q6006LH4 Q8006LH4 QK006LH4 Q2006RH4 Q4006RH4 Q6006RH4 Q8006RH4 QK006RH4 Q2008VH3 Q4008VH3 Q6008VH3 Q8008VH3 QK008VH3 Q2008VH4
Q2008DH3 Q4008DH3 Q6008DH3 Q8008DH3 QK008DH3 Q2008DH4 Q4008DH4 Q6008DH4 Q8008DH4 QK008DH4
8A
Q4008VH4 Q6008VH4 Q8008VH4 QK008VH4 Q2008LH4 Q4008LH4 Q6008LH4 Q8008LH4 QK008LH4 Q2010LH5 Q4010LH5 Q6010LH5 Q8010LH5 QK010LH5 Q2012LH5 Q4012LH5 Q6012LH5 Q8012LH5 QK012LH5 Q2008RH4 Q4008RH4 Q6008RH4 Q8008RH4 QK008RH4 Q2010RH5 Q4010RH5 Q6010RH5 Q8010RH5 QK010RH5 Q2012RH5 Q4012RH5 Q6012RH5 Q8012RH5 QK012RH5
10 A
12 A
See "General Notes" and "Electrical Specification Notes" on page E4 - 5.
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(c)2002 Teccor Electronics Thyristor Product Catalog
Data Sheets
Alternistor Triacs
VGT
(2) (6) (15) (17) (20)
VTM
(1) (5)
IH
(1) (8) (12)
IGTM
(14)
PGM
(14)
PG(AV)
ITSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
tgt
(10)
I2t
di/dt
(19)
Volts TC = 25 C MAX 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 Volts MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 mAmps MAX 15 15 15 15 15 35 35 35 35 35 35 35 35 35 35 15 15 15 15 15 35 35 35 35 35 35 35 35 35 35 50 50 50 50 50 50 50 50 50 50 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 18 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Amps Watts Watts
Amps 60/50 Hz 65/55 65/55 65/55 65/55 65/55 65/55 65/55 65/55 65/55 65/55 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 85/80 100/83 100/83 100/83 100/83 100/83 120/110 120/110 120/110 120/110 120/110 120/110 120/110 120/110 120/110 120/110 Volts/Sec MIN 20 20 20 20 20 25 25 25 25 25 25 25 25 25 25 20 20 20 20 20 25 25 25 25 25 25 25 25 25 25 30 30 30 30 30 30 30 30 30 30
Volts/mSec TC = 100 C TC = 125 C MIN 100 100 75 50 40 500 500 400 300 150 750 575 425 300 150 100 100 75 50 40 750 575 425 300 150 500 500 400 300 150 1150 1000 850 650 300 1150 1000 850 650 300 1000 750 650 500 1000 750 650 500 400 400 300 200 400 450 350 250 75 75 50 40 600 450 350 250 400 400 300 200 75 75 50 40 Sec TYP 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 17.5 17.5 17.5 17.5 17.5 17.5 17.5 17.5 17.5 17.5 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 41 41 41 41 41 60 60 60 60 60 60 60 60 60 60 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 70 Amps2Sec Amps/Sec
See "General Notes" and "Electrical Specification Notes" on page E4 - 5.
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Alternistor Triacs
Data Sheets
Part Number IT(RMS)
(4)(16)
A
Isolated
MT2
Non-isolated
VDRM
(1)
IGT
(3) (7) (15) (17)
A
MT2 G MT2 MT1
MT1 MT2
G
KAG
K A
G
MT1 G MT2
mAmps TO-263 D2Pak Q2016NH3 Q4016NH3 Q6016NH3 Q8016NH3 QK016NH3 Q2016NH4 Q4016NH4 Q6016NH4 Q8016NH4 QK016NH4 Q2016NH6 Q4016NH6 Q6016NH6 Q8016NH6 QK016NH6 Q2025NH6 Q4025NH6 Q6025NH6 Q8025NH6 QK025NH6 Volts 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 800 1000 200 400 600 QI 20 20 20 20 20 35 35 35 35 35 80 80 80 80 80 80 80 80 80 80 50 50 50 50 50 50 100 100 100 100 100 QII MAX 20 20 20 20 20 35 35 35 35 35 80 80 80 80 80 80 80 80 80 80 50 50 50 50 50 50 100 100 100 100 100 20 20 20 20 20 35 35 35 35 35 80 80 80 80 80 80 80 80 80 80 50 50 50 50 50 50 100 100 100 100 100 QIII
T0-220 MAX Q2016LH3 Q4016LH3 Q6016LH3 Q8016LH3 QK016LH3 Q2016LH4 Q4016LH4
TO-218 (16)
TO-218X
TO-220 Q2016RH3 Q4016RH3 Q6016RH3 Q8016RH3 QK016RH3 Q2016RH4 Q4016RH4 Q6016RH4 Q8016RH4 QK016RH4 Q2016RH6 Q4016RH6 Q6016RH6 Q8016RH6 QK016RH6
See "Package Dimensions" section for variations. (11)
16 A
Q6016LH4 Q8016LH4 QK016LH4 Q2016LH6 Q4016LH6 Q6016LH6 Q8016LH6 QK016LH6 Q2025L6 Q2025K6 Q4025K6 Q6025K6 Q8025K6 QK025K6 Q2025J6 Q4025J6 Q6025J6 Q8025J6 Q4025L6 Q6025L6 Q8025L6 QK025L6 Q2030LH5 Q4030LH5 Q6030LH5
Q2025R6 Q4025R6 Q6025R6 Q8025R6 QK025R6
25 A
30 A
35 A
Q2040K7 Q4040K7 Q2040J7 Q4040J7 Q6040J7 Q8040J7
Q2035RH5 Q4035RH5 Q6035RH5
Q2035NH5 Q4035NH5 Q6035NH5
200 400 600 200 400 600 800 1000
40 A
Q6040K7 Q8040K7 QK040K7
See "General Notes" and "Electrical Specification Notes" on page E4 - 5.
Test Conditions
di/dt -- Maximum rate-of-change of on-state current dv/dt -- Critical rate-of-rise of off-state voltage at rated VDRM gate open dv/dt(c) -- Critical rate-of-rise of commutation voltage at rated VDRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t -- RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM -- Peak off-state current gate open; VDRM = maximum rated value IGT -- DC gate trigger current in specific operating quadrants; VD = 12 V dc IGTM -- Peak gate trigger current
IH -- Holding current (DC); gate open IT(RMS) -- RMS on-state current conduction angle of 360 ITSM -- Peak one-cycle surge PG(AV) -- Average gate power dissipation PGM -- Peak gate power dissipation; IGT IGTM tgt -- Gate controlled turn-on time; IGT = 300 mA with 0.1 s rise time VDRM -- Repetitive peak blocking voltage VGT -- DC gate trigger voltage; VD = 12 V dc VTM -- Peak on-state voltage at maximum rated RMS current
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Data Sheets
Alternistor Triacs
IDRM
(1) (18)
VGT
VTM
IH
(1) (8) (12)
IGTM
(14)
PGM
(14)
PG(AV)
ITSM
(9) (13)
dv/dt(c)
(1) (4) (13)
dv/dt
(1)
tgt
(10)
I2t
di/dt
(19)
(2) (6) (1) (5) (15) (17) (20)
mAmps TC = 25 C 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.2 0.2 0.2 0.2 0.2 TC = TC = 100 C 125 C MAX 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 1 3 0.5 0.5 0.5 0.5 0.5 0.5 2 2 2 2 5 2 2 2 2 2 2 5 5 5 5 2 2 2 3 2 2 2 3 2 2 2 3 2 27 2 3
Volts TC = 25 C MAX 1.5 1.5 1.5 1.5 1.5 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5
Volts TC = 25 C mAmps MAX 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.8 1.8 1.8 1.8 1.8 1.4 1.4 1.4 1.5 1.5 1.5 1.8 1.8 1.8 1.8 1.8 MAX 35 35 35 35 35 50 50 50 50 50 70 70 70 70 70 100 100 100 100 100 75 75 75 75 75 75 120 120 120 120 120 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 4 4 4 4 4 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 40 40 40 40 40 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.8 0.8 0.8 0.8 0.8 Amps Watts Watts
Amps 60/50 Hz 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 200/167 250/208 250/208 250/208 250/208 250/208 350/290 350/290 350/290 350/290 350/290 350/290 400/335 400/335 400/335 400/335 400/335 Volts/Sec MIN 20 20 20 20 20 25 25 25 25 25 30 30 30 30 30 30 30 30 30 30 20 20 20 20 20 20 50 50 50 50 50
Volts/mSec TC = TC = 100 C 125 C MIN 500 400 300 275 200 650 600 500 425 300 875 875 800 700 350 875 875 800 700 400 650 600 500 650 600 500 1100 1100 1000 900 500 500 475 400 500 475 400 700 700 625 575 600 600 520 475 600 600 520 475 500 475 400 350 400 350 250 200 Sec TYP 3 3 3 3 3 3 3 3 3 3 5 5 5 5 5 5 5 5 5 5 3 3 3 3 3 3 5 5 5 5 5 166 166 166 166 166 166 166 166 166 166 166 166 166 166 166 259 259 259 259 259 508 508 508 508 508 508 664 664 664 664 664 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 150 150 150 150 150 Amps2Sec Amps/Sec
General Notes
* * * * * All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 C unless specified otherwise. Operating temperature range (TJ) is -40 C to +125 C. Storage temperature range (TS) is -40 C to +125 C. Lead solder temperature is a maximum of 230 C for 10 seconds maximum 1/16" (1.59 mm) from case. The case temperature (TC) is measured as shown in the dimensional outline drawings. See "Package Dimensions" section.
Electrical Specification Notes
(1) (2) (3) (4) For either polarity of MT2 with reference to MT1 terminal For either polarity of gate voltage (VGT) with reference to MT1 terminal See Gate Characteristics and Definition of Quadrants. See Figure E4.1 through Figure E4.4 for current rating at specific operating temperature and Figure 4.16 for free air rating (no heat sink). See Figure E4.5 and Figure E4.6 for iT and vT. See Figure E4.7 for VGT versus TC. See Figure E4.8 for IGT versus TC. See Figure E4.9 for IH versus TC. See Figure E4.10 and Figure E4.11 for surge rating with specific durations.
(5) (6) (7) (8) (9)
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Alternistor Triacs
Data Sheets
(10) See Figure E4.12 for tgt versus IGT. (11) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (12) Initial on-state current = 400 mA dc for 16 A to 40 A devices and 100 mA for 6 A to 12 A devices. (13) See Figure E4.1 through Figure E4.4 for maximum allowable case temperature at maximum rated current. (14) Pulse width 10 s; IGT IGTM (15) For 6 A to 12 A devices, RL = 60 W; 16 A and above, RL = 30 W (16) 40 A pin terminal leads on K package can run 100 C to 125 C. (17) Alternistor does not turn on in Quadrant IV. (18) TC = TJ for test conditions in off state (19) IGT = 200 mA for 6 A to 12 A devices and 500 mA for 16 A to 40 A devices with gate pulse having rise time of 0.1 s. (20) Minimum non-trigger VGT at 125 C is 0.2 V.
(-) (-)
ALL POLARITIES ARE REFERENCED TO MT1 MT2 POSITIVE (Positive Half Cycle)
MT2 IGT GATE
+
MT2
(+)
IGT GATE MT1
MT1
IGT
IGT GATE
REF MT2
QII QI QIII QIV
(+)
REF
+
MT2 IGT GATE MT1
IGT
MT1 REF
Gate Characteristics
Teccor triacs may be turned on in the following ways: * * In-phase signals (with standard AC line) using Quadrants I and III Application of unipolar pulses (gate always negative), using Quadrants II and III with negative gate pulses
REF MT2 NEGATIVE (Negative Half Cycle) NOTE: Alternistors will not operate in QIV
-
Definition of Quadrants
Electrical Isolation
Teccor's isolated alternistor packages withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab, over the operating temperature range of the device. The following isolation table shows standard and optional isolation ratings.
Electrical Isolation
In all cases, if maximum surge capability is required, gate pulses should be a minimum of one magnitude above minimum IGT rating with a steep rising waveform (1 s rise time). If QIV and QI operation is required (gate always positive), see Figure AN1002.8, "Amplified Gate" Thyristor Circuit.
from Leads to Mounting Tab *
V AC RMS 2500 4000
TO-218 Isolated
Standard N/A
TO-220 Isolated
Standard Optional **
TO-218X Isolated
Standard N/A
* UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number.
Thermal Resistance (Steady State) R q JC [R q JA] (TYP.) C/W
Package Code K J L R D V N
Type
TO-218 Isolated * 6A 8A 10 A 12 A 16 A 25 A 30 A 35 A 40 A
TO-218X Isolated *
1.35
1.32
TO-220 Isolated ** 3.3 [50] 2.8 2.6 2.3 2.1 2.0 2.3
TO-220 Non-Isolated 1.80 [45] 1.50 1.30 1.20 1.10 0.87 0.85
TO-252 D-Pak 2.1 1.8
TO-251 V-Pak 2.3 [64] 2.1
TO-263 D2Pak 1.80 1.50 1.30 1.20 1.10 0.87
0.97
0.95
* UL Recognized Product per UL File E71639 ** For 4000 V isolation, use V suffix in part number.
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Data Sheets
Alternistor Triacs
Maximum Allowable Case Temperature (TC) - C
130 120 110 100 90 80 70 60 0 0 2 4 6 8 10 12 14 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 6A TO-220 (NON-ISOLATED) AND D2 PAK 6A TO-220 (ISOLATED)
130
Maximum Allowable Case Temperature (TC) - C
10A TO-220 (NON-ISOLATED) AND D2 PAK 12A TO-220 (ISOLATED)
120
110
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 35 A TO-220 (Non-isolated) and TO-263 25 A and 30 A TO-220 (Isolated)
100
90
40 A TO-218 (Isolated)
80 25 A TO-220 (Non-isolated) TO-218 (Isolated) TO-263
70
60
50 0 10 20 25 30 40 50
RMS On-State Current [lT(RMS)] - AMPS
RMS On-state Current [lT(RMS)] - Amps
Figure E4.1 Maximum Allowable Case Temperature versus On-state Current (6 A to 12 A)
Figure E4.4 Maximum Allowable Case Temperature versus On-state Current (25 A to 40 A)
20
130 120 12 A TO-220 (Non-isolated) and TO-263 10 A TO-220 (Isolated)
18
Positive or Negative Instantaneous On-state Current (iT) - Amps
Maximum Allowable Case Temperature (TC) - C
16 14 12 10 8 6 4 2 0 0
TC = 25 C
110 100 90 80 70 60 0 0 2 4 6 8 8 A TO-220 (Isolated) 8 A TO-220 (Non-isolated), TO-263, TO-251, and TO-252
6 A to 12 A Devices
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 10 12 14
0.6
0.8
1.0
1.2
1.4
1.6
RMS On-state Current [lT(RMS)] - Amps
Positive or Negative Instantaneous On-state Voltage (vT) - Volts
Figure E4.2 Maximum Allowable Case Temperature versus On-state Current (8 A to 12 A)
Figure E4.5 On-state Current versus On-state Voltage (Typical) (6 A to 12 A)
130
90 80
Maximum Allowable Case Temperature (T C ) - C
120 110
TO
16 A
-22
Positive or Negative Instantaneous On-state Current (i ) - Amps
16A
TC = 25C
70 60
0( No
-22
n-is
100 90 80 70 60 0 0 5
0( Iso
lat
ed
63
T
TO
ola
ted
)a nd TO -2
40 A Devices
50 40
)
25 A to 35 A Devices
30 20
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing
10 15
16 A Devices
10 0 0 0.6 0.8 1.0 1.2 1.4
T
1.6
1.8
RMS On-state Current [I T(RMS) ] - Amps
Positive or Negative Instantaneous On-state Voltage (v ) - Volts
Figure E4.3 Maximum Allowable Case Temperature versus On-state Current (16 A)
Figure E4.6 On-state Current versus On-state Voltage (Typical) (16 A to 40 A)
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Alternistor Triacs
Data Sheets
200
2.0
Peak Surge (Non-Repetitive) On-state Current (ITSM) - Amps
V GT (T C = 25 C)
120 100 80 60 50 40 30 20
10 A to 12 A Devices 8 A Devices
Notes: 1) Gate control may be lost during and immediately following surge current interval 2) Overload may not be repeated until junction temperature has returned to steady state rated value.
1.5
V GT
8 A TO-251 and TO-252 6 A Devices 6 A TO-251 and TO-252
1.0
Ratio of
.5
10 8 6 5 4 3 2
0 -65
-40
-15
+25
+65
+125
SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [IT(RMS)]: Maximum Rated Value at Specified Case Temperature
1 1 2 3456 8 10 20 30 40 60 80 100 200 300 600 1000
Case Temperature (T C ) - C
Surge Current Duration - Full Cycles
Figure E4.7 Normalized DC Gate Trigger Voltage for all Quadrants versus Case Temperature
Figure E4.10 Peak Surge Current versus Surge Current Duration (6 A to 12 A)
1000
Peak Surge (Non-repetitive) On-state Current (I TSM ) - Amps
4.0
I GT (T C = 25 C)
400 300 250 200
SUPPLY FREQUENCY: 60Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature
3.0
I GT
40 A Devices 35 A Devices
2.0
100 80 60 50 40 30 20
30 A Devices
Notes: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
Ratio of
1.0
25 A Devices 16 A Devices
0 -65
-40
-15
+25
+65
+125
10 1
Case Temperature (T C ) - C
10
100
1000
Surge Current Duration - Full Cycles
Figure E4.8 Normalized DC Gate Trigger Current for all Quadrants versus Case Temperature
Figure E4.11 Peak Surge Current versus Surge Current Duration (16 A to 40 A)
4.0
INITIAL ON-STATE CURRENT = 400 mA dc 16 A to 40 A Devices = 100 mA dc 6 to 12A Devices
10
I H (T C = 25 C)
Typical Turn-on Time (t gt ) - s
3.0
8 I GT = 80 to 100 mA 6
IH
2.0
4 I GT = 50 mA 2 I GT = 10 mA to 35 mA
Ratio of
1.0
0 -65
0
0
100
200
300
400
500
-40
-15
+25
+65
+125
Case Temperature (T C ) - C
DC Gate Trigger Current (I GT ) - mA
Figure E4.9 Normalized DC Holding Current versus Case Temperature
Figure E4.12 Turn-on Time versus Gate Trigger Current (Typical)
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Data Sheets
Alternistor Triacs
18
120
16
Maximum Allowable Ambient Temperature (TA) - C
Average On-state Power Dissipation [PD(AV)] - Watts
14 12 10 8
100
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING - NO HEATSINK
80
6A to 12A Devices
6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
TO-220 Devices
60
TO-251 Devices
40
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360
25 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
RMS On-state Current [lT(RMS)] - AmpsS
RMS On-state Current [IT (RMS)] - Amps
Figure E4.13 Power Dissipation (Typical) versus On-state Current (6 A to 12 A)
Figure E4.16 Maximum Allowable Ambient Temperature versus On-state Current
18
CURRENT WAVEFORM: Sinusoidal
Average On-state Power Dissipation [P D (AV) ] - Watts
16 LOAD: Resistive or inductive
CONDUCTION ANGLE: 360
14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 RMS On-state Current [I T(RMS) ] - Amps 16A Devices
Figure E4.14 Power Dissipation (Typical) versus On-state Current (16 A)
45
Current Waveform: Sinusoidal
Average On-State Power Dissipation [P D(AV) ]--Watts
40 Load: Resistive or Inductive 35 30
25 A
Conduction Angle: 360
25 20 15 10 5 0 0 4 8
30 A and 35 A Devices 40 A
12 16 20 24 28 32 36 40
RMS On-State Current [I T(RMS) ]--Amps
Figure E4.15 Power Dissipation (Typical) versus On-state Current (25 A to 40 A)
(c)2002 Teccor Electronics Thyristor Product Catalog
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Notes

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